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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH15N100P IXFV15N100P IXFV15N100PS
VDSS ID25
RDS(on) trr
= =
1000V 15A 760m 300ns
PLUS220 (IXFV)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Ratings 1000 1000 30 40 15 40 7.5 500 15 543 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W C C C C C Nm/lb.in. N/lb. g g
G D S D (TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
TO-247 (IXFH)
D (TAB)
G = Gate S = Source Features
D = Drain TAB = Drain
Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) Mounting force (PLUS 220) TO-247 PLUS 220 types
300 260 1.13/10 11..65/2.5..14.6 6 4
International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125C
Characteristic Values Min. Typ. Max. 1000 3.5 6.5 100 V V nA
Easy to mount Space savings High power density Applications: Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls
25 A 1.0 mA 670 760 m
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2008 IXYS CORPORATION, All rights reserved
DS99891A(4/08)
IXFH15N100P IXFV15N100P IXFV15N100PS
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS (TO-247, PLUS220) 0.21 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 6.5 10.5 5140 322 43 1.20 41 44 44 58 97 38 42 S pF pF pF ns ns ns ns nC nC nC 0.23 C/W C/W PLUS220 (IXFV) Outline
Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive IF = IS, VGS = 0V, Note 1 IF = 7.5A, -di/dt = 100A/s VR = 100V, VGS = 0V
Characteristic Values Min. Typ. Max. 15 60 1.5 A A V TO-247 (IXFH) Outline
300 ns 0.6 7 C A
P
Note 1: Pulse test, t 300s; duty cycle, d 2%.
PLUS220SMD (IXFV_S) Outline
Dim.
e
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFH15N100P IXFV15N100P IXFV15N100PS
Fig. 1. Output Characteristics @ 25C
16 14 12 21 VGS = 10V 9V 30 27 24 VGS = 10V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
9V
10 8 6 4 7V 2 0 0 2 4 6 8 10 12 8V
ID - Amperes
18 15 12 9 6 3 0 0 3 6 9 12 15 18 21 24 27 30 7V 8V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
16 14 12 8V VGS = 10V 9V 3.0 2.8 2.6
Fig. 4. RDS(on) Normalized to ID = 7.5A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 I D = 7.5A I D = 15A
ID - Amperes
10 8 7V 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 6V
0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 7.5A Value vs. Drain Current
2.6 2.4 VGS = 10V TJ = 125C 16 14 12
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.2
ID - Amperes
TJ = 25C 0 3 6 9 12 15 18 21 24 27 30
2 1.8 1.6 1.4 1.2 1 0.8
10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXFH15N100P IXFV15N100P IXFV15N100PS
Fig. 7. Input Admittance
16 14 12 TJ = 125C 25C - 40C 18 16 14
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
12 10 8 6
10 8 6 4 2 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
TJ = - 40C 25C 125C
4 2 0 0 2 4 6 8 10 12 14 16 18
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
45 40 35 16 14 12 VDS = 500V I D = 7.5A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
30 25 20 15 10 5 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 TJ = 125C TJ = 25C
VGS - Volts
10 8 6 4 2 0 0 20 40 60 80 100 120 140
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
10,000 1.000
Fig. 12. Maximum Transient Thermal Impedance
Capacitance - PicoFarads
Ciss
Z(th)JC - C / W
30 35 40
1,000
0.100
Coss 100
f = 1 MHz
10 0 5 10 15 20
Crss 0.010 0.0001
25
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_15N100P(76)4-1-08-A

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